IRF1310
vs
IRF610B
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
Drain
|
|
| Configuration |
Single
|
Single With Built-In Diode
|
| DS Breakdown Voltage-Min |
100 V
|
200 V
|
| Drain Current-Max (ID) |
43 A
|
3.3 A
|
| Drain-source On Resistance-Max |
0.04 Ω
|
1.5 Ω
|
| FET Technology |
Metal-Oxide Semiconductor
|
Metal-Oxide Semiconductor
|
| JEDEC-95 Code |
TO-220AB
|
TO-220
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
Enhancement Mode
|
Enhancement Mode
|
| Package Body Material |
Plastic/Epoxy
|
Plastic/Epoxy
|
| Package Shape |
Rectangular
|
Rectangular
|
| Package Style |
Flange Mount
|
Flange Mount
|
| Polarity/Channel Type |
N-Channel
|
N-Channel
|
| Power Dissipation Ambient-Max |
150 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
No
|
No
|
| Terminal Form |
Through-Hole
|
Through-Hole
|
| Terminal Position |
Single
|
Single
|
| Transistor Application |
Switching
|
Switching
|
| Transistor Element Material |
Silicon
|
Silicon
|
| Base Number Matches |
1
|
2
|
| Part Package Code |
|
SFM
|
| Package Description |
|
To-220, 3 Pin
|
| Pin Count |
|
3
|
| Avalanche Energy Rating (Eas) |
|
40 Mj
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
38 W
|
| Pulsed Drain Current-Max (IDM) |
|
10 A
|
| Terminal Finish |
|
Tin Lead
|
|
|
|