IRHLF7S7214SCS
vs
IRHLF7S7214
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
,
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
2
|
| Avalanche Energy Rating (Eas) |
|
29 mJ
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
250 V
|
| Drain Current-Max (ID) |
|
3.3 A
|
| Drain-source On Resistance-Max |
|
1 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
|
TO-205AF
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
|
13.2 A
|
| Reference Standard |
|
RH - 100K Rad(Si)
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare IRHLF7S7214SCS with alternatives
Compare IRHLF7S7214 with alternatives