Part Details for IRHLF7S7214 by Infineon Technologies AG
Overview of IRHLF7S7214 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRHLF7S7214
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRHLF7S7214
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Avnet Americas | Transistor MOSFET N-Channel 250V 3.3A 3-Pin TO-39 - Bulk (Alt: IRHLF7S7214) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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RFQ | |
DISTI #
IRHLF7S7214
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Avnet Americas | Transistor MOSFET N-Channel 250V 3.3A 3-Pin TO-39 - Bulk (Alt: IRHLF7S7214) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for IRHLF7S7214
IRHLF7S7214 CAD Models
IRHLF7S7214 Part Data Attributes:
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IRHLF7S7214
Infineon Technologies AG
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Datasheet
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IRHLF7S7214
Infineon Technologies AG
Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 3.3 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 13.2 A | |
Reference Standard | RH - 100K Rad(Si) | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRHLF7S7214
This table gives cross-reference parts and alternative options found for IRHLF7S7214. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHLF7S7214, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRHLF77214 | Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRHLF7S7214 vs IRHLF77214 |
IRHLF7S7214SCS | Power Field-Effect Transistor, | Infineon Technologies AG | IRHLF7S7214 vs IRHLF7S7214SCS |
IRHLF77214 | Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | Infineon Technologies AG | IRHLF7S7214 vs IRHLF77214 |