IRL5NJ024 vs NTDV18N06LT4G feature comparison

IRL5NJ024 Infineon Technologies AG

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NTDV18N06LT4G onsemi

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG ON SEMICONDUCTOR
Package Description CHIP CARRIER, R-CBCC-N3 DPAK-3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon onsemi
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 56 mJ 72 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 17 A 18 A
Drain-source On Resistance-Max 0.075 Ω 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 35 W 55 W
Pulsed Drain Current-Max (IDM) 68 A 54 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin (Sn)
Terminal Form NO LEAD GULL WING
Terminal Position BOTTOM SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Pbfree Code Yes
Part Package Code DPAK (SINGLE GAUGE) TO-252
Pin Count 3
Manufacturer Package Code 369C
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 80 pF
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Power Dissipation Ambient-Max 55 W
Reference Standard AEC-Q101
Turn-off Time-Max (toff) 120 ns
Turn-on Time-Max (ton) 180 ns

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