IS43DR16128-3DBI
vs
MT47H128M16RT-25EAAT:C
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
MICRON TECHNOLOGY INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
LFBGA, BGA84,9X15,32
|
TFBGA, BGA84,9X15,32
|
| Pin Count |
84
|
84
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Access Mode |
MULTI BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
| Access Time-Max |
0.45 ns
|
0.4 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| Clock Frequency-Max (fCLK) |
333 MHz
|
400 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
4,8
|
4,8
|
| JESD-30 Code |
R-PBGA-B84
|
R-PBGA-B84
|
| JESD-609 Code |
e0
|
e1
|
| Length |
13.5 mm
|
12.5 mm
|
| Memory Density |
2147483648 bit
|
2147483648 bit
|
| Memory IC Type |
DDR2 DRAM
|
DDR2 DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
84
|
84
|
| Number of Words |
134217728 words
|
134217728 words
|
| Number of Words Code |
128000000
|
128000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
105 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
128MX16
|
128MX16
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
LFBGA
|
TFBGA
|
| Package Equivalence Code |
BGA84,9X15,32
|
BGA84,9X15,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, LOW PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
8192
|
8192
|
| Seated Height-Max |
1.4 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Sequential Burst Length |
4,8
|
4,8
|
| Standby Current-Max |
0.03 A
|
0.012 A
|
| Supply Current-Max |
0.485 mA
|
0.33 mA
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN LEAD
|
TIN SILVER COPPER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
10.5 mm
|
9 mm
|
| Base Number Matches |
2
|
1
|
| Screening Level |
|
AEC-Q100
|
|
|
|
Compare IS43DR16128-3DBI with alternatives
Compare MT47H128M16RT-25EAAT:C with alternatives