IS43DR16320C-25DBLI-TR vs K4T51163QQ-BCF70 feature comparison

IS43DR16320C-25DBLI-TR Integrated Silicon Solution Inc

Buy Now Datasheet

K4T51163QQ-BCF70 Samsung Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Package Description TFBGA, VFBGA,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1 e1
Length 12.5 mm 12.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16 32MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 8 mm 7.5 mm
Base Number Matches 1 1

Compare IS43DR16320C-25DBLI-TR with alternatives

Compare K4T51163QQ-BCF70 with alternatives