IXFN230N10 vs APT10M07JVR feature comparison

IXFN230N10 IXYS Corporation

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APT10M07JVR Advanced Power Technology

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer IXYS CORP ADVANCED POWER TECHNOLOGY INC
Package Description MINIBLOC-4 ISOTOP-4
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED HIGH VOLTAGE
Avalanche Energy Rating (Eas) 4000 mJ 3600 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 230 A 225 A
Drain-source On Resistance-Max 0.006 Ω 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4 R-PUFM-X4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 700 W 700 W
Pulsed Drain Current-Max (IDM) 920 A 900 A
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IXFN230N10 with alternatives

Compare APT10M07JVR with alternatives