Part Details for IXFN230N10 by IXYS Corporation
Overview of IXFN230N10 by IXYS Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN230N10
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
69C1144
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Newark | N Channel Mosfet, 100V, 230A, Sot-227B, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:230A, Transistor Mounting:Module, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXFN230N10 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
IXFN230N10-ND
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DigiKey | MOSFET N-CH 100V 230A SOT-227B Min Qty: 300 Lead time: 43 Weeks Container: Tube | Limited Supply - Call |
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$45.6924 | Buy Now |
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DISTI #
747-IXFN230N10
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Mouser Electronics | Discrete Semiconductor Modules 230 Amps 100V 0.006 Rds RoHS: Compliant | 0 |
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$50.9500 / $57.9900 | Order Now |
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DISTI #
IXFN230N10
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TTI | Discrete Semiconductor Modules 230 Amps 100V 0.006 Rds RoHS: Compliant pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Tube | Americas - 0 |
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Buy Now | |
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DISTI #
3582073
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element14 Asia-Pacific | MOSFET, N, SOT-227B RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$34.6533 / $39.5744 | Buy Now |
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DISTI #
3582073
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Farnell | MOSFET, N, SOT-227B RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 0 |
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$34.7849 / $39.7237 | Buy Now |
Part Details for IXFN230N10
IXFN230N10 CAD Models
IXFN230N10 Part Data Attributes
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IXFN230N10
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN230N10
IXYS Corporation
Power Field-Effect Transistor, 230A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 4000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 230 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 700 W | |
| Pulsed Drain Current-Max (IDM) | 920 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN230N10
This table gives cross-reference parts and alternative options found for IXFN230N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN230N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK416-100AE | TRANSISTOR 110 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFN230N10 vs BUK416-100AE |
| IXFN200N10P | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFN230N10 vs IXFN200N10P |
| IXFE180N10 | Power Field-Effect Transistor, 176A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFN230N10 vs IXFE180N10 |
| APT10M07JVR | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | Microsemi Corporation | IXFN230N10 vs APT10M07JVR |
| BUK416-100BE | TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFN230N10 vs BUK416-100BE |
| APT10M07JVFR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFN230N10 vs APT10M07JVFR |
| APT10M07JVR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN230N10 vs APT10M07JVR |
| IXFN150N10 | Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | Littelfuse Inc | IXFN230N10 vs IXFN150N10 |
| IXFN280N085 | Power Field-Effect Transistor, 280A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN230N10 vs IXFN280N085 |
| IXFN180N10 | Power Field-Effect Transistor, 180A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN230N10 vs IXFN180N10 |