JAN1N5314-1
vs
1N5314-1E3/TR
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
HERMETIC SEALED PACKAGE-2
|
|
Reach Compliance Code |
unknown
|
compliant
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
JEDEC-95 Code |
DO-7
|
DO-7
|
JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
Limiting Voltage-Max |
2.9 V
|
2.9 V
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
UNSPECIFIED
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Power Dissipation-Max |
0.5 W
|
0.5 W
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500/463G
|
|
Regulation Current-Nom (Ireg) |
4.7 mA
|
4.7 mA
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Surface Mount |
NO
|
NO
|
Technology |
FIELD EFFECT
|
FIELD EFFECT
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.70
|
Dynamic Impedance-Min |
|
235000 Ω
|
JESD-609 Code |
|
e3
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-65 °C
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare JAN1N5314-1 with alternatives
Compare 1N5314-1E3/TR with alternatives