JAN1N5461B
vs
1N5461B
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
KNOX SEMICONDUCTORS INC
|
MSI ELECTRONICS INC
|
| Part Package Code |
DO-7
|
|
| Package Description |
O-LALF-W2
|
O-LALF-W2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
30 V
|
30 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Cap Tolerance |
5%
|
5%
|
| Diode Capacitance Ratio-Min |
2.7
|
2.7
|
| Diode Capacitance-Nom |
6.8 pF
|
6.8 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| JEDEC-95 Code |
DO-7
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.4 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Quality Factor-Min |
600
|
600
|
| Reference Standard |
MIL
|
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Reverse Current-Max |
2e-8 µA
|
2e-8 µA
|
| Reverse Test Voltage |
25 V
|
25 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
2
|
| Additional Feature |
|
HIGH Q
|
| Frequency Band |
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
|
|
|
Compare JAN1N5461B with alternatives
Compare 1N5461B with alternatives