JAN1N5806
vs
1N5806
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
VPT COMPONENTS
|
SEMITRONICS CORP
|
Reach Compliance Code |
compliant
|
unknown
|
Case Connection |
ISOLATED
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-XALF-W2
|
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
|
Output Current-Max |
1 A
|
2.5 A
|
Package Body Material |
UNSPECIFIED
|
|
Package Shape |
ROUND
|
|
Package Style |
LONG FORM
|
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500
|
|
Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
|
Terminal Position |
AXIAL
|
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
Application |
|
EFFICIENCY
|
Forward Voltage-Max (VF) |
|
0.875 V
|
Operating Temperature-Max |
|
175 °C
|
|
|
|
Compare JAN1N5806 with alternatives
Compare 1N5806 with alternatives