JAN1N5809US vs 1N5809US feature comparison

JAN1N5809US Bkc Semiconductors Inc

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1N5809US TT Electronics Power and Hybrid / Semelab Limited

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer BKC SEMICONDUCTORS INC SEMELAB LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH SURGE CAPABILITY HIGH RELIABILITY
Application FAST RECOVERY ULTRA FAST RECOVERY
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V
JESD-30 Code O-MELF-R2 R-PDSO-C2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 6 A 3 A
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/477
Rep Pk Reverse Voltage-Max 100 V
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND C BEND
Terminal Position END DUAL
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
JEDEC-95 Code DO-214AA
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare JAN1N5809US with alternatives

Compare 1N5809US with alternatives