JAN1N5809US vs 1N5809US feature comparison

JAN1N5809US Micross Components

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1N5809US Sensitron Semiconductors

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Part Life Cycle Code Active Active
Ihs Manufacturer MICROSS COMPONENTS SENSITRON SEMICONDUCTOR
Reach Compliance Code unknown compliant
Application ULTRA FAST RECOVERY POWER ULTRA FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V 0.925 V
JESD-30 Code O-LELF-R2 E-LELF-R2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 6 A 6 A
Package Body Material GLASS GLASS
Package Shape ROUND ELLIPTICAL
Package Style LONG FORM LONG FORM
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/477F
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount YES YES
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 7
Pbfree Code No
Rohs Code No
Part Package Code MELF
Package Description MELF-B, 2 PIN
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
JESD-609 Code e0
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA
Terminal Finish TIN LEAD

Compare JAN1N5809US with alternatives

Compare 1N5809US with alternatives