JAN1N6111 vs P6KE110A feature comparison

JAN1N6111 Semicon Components Inc

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P6KE110A Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMICON COMPONENTS INC MICROSEMI CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 14.44 V 105 V
Breakdown Voltage-Nom 16 V 110 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 23.415 V 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 IEC-61000-4-4, IEC-61000-4-5
Rep Pk Reverse Voltage-Max 12 V 94 V
Reverse Current-Max 20 µA 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 82
Pbfree Code No
Part Package Code DO-15
Package Description PLASTIC, T-18, 2 PIN
Pin Count 2
Breakdown Voltage-Max 116 V

Compare JAN1N6111 with alternatives

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