JAN1N6111 vs P6KE110CA feature comparison

JAN1N6111 Semicon Components Inc

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P6KE110CA Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMICON COMPONENTS INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 14.44 V 105 V
Breakdown Voltage-Nom 16 V 110 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 23.415 V 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 12 V 94 V
Reverse Current-Max 20 µA 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 78
Pbfree Code No
Package Description PLASTIC, T-18, 2 PIN
Pin Count 2
Breakdown Voltage-Max 116 V
Moisture Sensitivity Level 1

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