JAN1N6111 vs SA90A feature comparison

JAN1N6111 Semicon Components Inc

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SA90A Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMICON COMPONENTS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 14.44 V 100 V
Breakdown Voltage-Nom 16 V 105.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 23.415 V 146 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 MIL-STD-202
Rep Pk Reverse Voltage-Max 12 V 90 V
Reverse Current-Max 20 µA 3 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 10
Package Description PLASTIC PACKAGE-2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 111 V
JEDEC-95 Code DO-15
Moisture Sensitivity Level 1
Reverse Test Voltage 90 V

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