JAN1N6133 vs SA110AHE3/54 feature comparison

JAN1N6133 Semicoa Semiconductors

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SA110AHE3/54 Vishay Semiconductors

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Pbfree Code No Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer SEMICOA CORP VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 117.325 V 122 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 8 2
Rohs Code Yes
Part Package Code DO-15
Package Description O-PALF-W2
Pin Count 2
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 135 V
Breakdown Voltage-Nom 128.5 V
Clamping Voltage-Max 177 V
JEDEC-95 Code DO-204AC
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Rep Pk Reverse Voltage-Max 110 V

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