JAN1N6133A vs SA110C-GT3 feature comparison

JAN1N6133A Semtech Corporation

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SA110C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer SEMTECH CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description HERMETIC SEALED, GLASS PACKAGE-2 O-PALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 123.5 V 122 V
Breakdown Voltage-Nom 130 V 135.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 178.8 V 196 V
Configuration COMMON CATHODE, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 2 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.5 W 3 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/516 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 98.8 V 110 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology ZENER AVALANCHE
Terminal Finish TIN COPPER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Rohs Code Yes
Breakdown Voltage-Max 149 V
JEDEC-95 Code DO-15
Moisture Sensitivity Level 1

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Compare SA110C-GT3 with alternatives