JAN1N6133A vs MAP6KE130AE3 feature comparison

JAN1N6133A Defense Logistics Agency

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MAP6KE130AE3 Microsemi Corporation

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Part Life Cycle Code Active Transferred
Ihs Manufacturer DEFENSE LOGISTICS AGENCY MICROSEMI CORP
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 123.5 V 124 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Qualified Not Qualified
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 2
Pbfree Code Yes
Rohs Code Yes
Package Description ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 137 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 111 V
Terminal Finish MATTE TIN

Compare JAN1N6133A with alternatives

Compare MAP6KE130AE3 with alternatives