JAN1N6133A vs SA110AHE3/54 feature comparison

JAN1N6133A Semicon Components Inc

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SA110AHE3/54 Vishay Semiconductors

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMICON COMPONENTS INC VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 123.5 V 122 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 178.8 V 177 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-15
Package Description O-PALF-W2
Pin Count 2
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 135 V
Breakdown Voltage-Nom 128.5 V
JEDEC-95 Code DO-204AC
JESD-609 Code e3
Rep Pk Reverse Voltage-Max 110 V
Terminal Finish MATTE TIN

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