JAN1N6151 vs 1N6152 feature comparison

JAN1N6151 Micross Components

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1N6152 Microsemi Corporation

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Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROSS COMPONENTS MICROSEMI CORP
Reach Compliance Code unknown unknown
Additional Feature LOW IMPEDANCE HIGH RELIABILITY
Breakdown Voltage-Min 21.66 V
Breakdown Voltage-Nom 24 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 34.965 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 7.5 W 3 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 18.2 V 20.6 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 12
Pbfree Code No
Rohs Code No
Package Description HERMETIC SEALED, GLASS, C PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e0
Terminal Finish TIN LEAD

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