JAN1N6152 vs JANS1N6152 feature comparison

JAN1N6152 Microchip Technology Inc

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JANS1N6152 Semtech Corporation

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Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SEMTECH CORP
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 7.5 W
Qualification Status Qualified Qualified
Reference Standard MIL-19500 MIL-19500/516
Rep Pk Reverse Voltage-Max 20.6 V 20.6 V
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 5
Package Description HERMETIC SEALED PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 24.3 V
Breakdown Voltage-Nom 27 V
Clamping Voltage-Max 39.2 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare JAN1N6152 with alternatives

Compare JANS1N6152 with alternatives