JAN2N2880 vs JAN2N2880 feature comparison

JAN2N2880 Solitron Devices Inc

Buy Now Datasheet

JAN2N2880 New England Semiconductor

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SOLITRON DEVICES INC NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Case Connection COLLECTOR
Collector Current-Max (IC) 5 A 5 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 15
JEDEC-95 Code TO-111 TO-59
JESD-30 Code O-MUPM-D3 O-MUPM-D3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 175 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style POST/STUD MOUNT POST/STUD MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 30 W
Power Dissipation-Max (Abs) 30 W
Qualification Status Qualified Not Qualified
Reference Standard MIL
Surface Mount NO NO
Terminal Form SOLDER LUG SOLDER LUG
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 50 MHz 20 MHz
Base Number Matches 1 1

Compare JAN2N2880 with alternatives

Compare JAN2N2880 with alternatives