JANS1N6111
vs
JANTXV1N6107A
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SENSITRON SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Breakdown Voltage-Min |
15.15 V
|
10.45 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
2 W
|
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rep Pk Reverse Voltage-Max |
12.2 V
|
8.4 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
6
|
9
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Date Of Intro |
|
1999-07-20
|
| Clamping Voltage-Max |
|
15.6 V
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Reference Standard |
|
MIL-19500
|
| Reverse Current-Max |
|
20 µA
|
|
|
|
Compare JANTXV1N6107A with alternatives