JANTX1N6471 vs JAN1N6471 feature comparison

JANTX1N6471 Microsemi Corporation

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JAN1N6471 Semtech Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP SEMTECH CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 13.6 V 13.6 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/552C MIL-19500/552
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 2
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Nom 13 V
Clamping Voltage-Max 22.6 V
Reverse Current-Max 1000 µA

Compare JANTX1N6471 with alternatives

Compare JAN1N6471 with alternatives