JANTX1N6471 vs JAN1N6471 feature comparison

JANTX1N6471 Semtech Corporation

Buy Now Datasheet

JAN1N6471 Semtech Corporation

Buy Now Datasheet
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SEMTECH CORP SEMTECH CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 18 Weeks
Samacsys Manufacturer SEMTECH
Additional Feature HIGH RELIABILITY TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min 13.6 V 13.6 V
Breakdown Voltage-Nom 13 V 13 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 22.6 V 22.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Qualified Qualified
Reference Standard MIL-19500/552 MIL-19500/552
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Power Dissipation-Max 5 W
Reverse Current-Max 1000 µA

Compare JANTX1N6471 with alternatives

Compare JAN1N6471 with alternatives