JANTX1N6475 vs 1.5KE47HB0G feature comparison

JANTX1N6475 Microchip Technology Inc

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1.5KE47HB0G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
Breakdown Voltage-Min 43.7 V 42.3 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Qualified
Reference Standard MIL-19500/552C AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 40.3 V 38.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Package Description O-PALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 51.7 V
JEDEC-95 Code DO-201
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C

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