JANTX1N6475 vs JANTXV1N5649A feature comparison

JANTX1N6475 Microchip Technology Inc

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JANTXV1N5649A Vishay Semiconductors

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC GENERAL SEMICONDUCTOR INC
Reach Compliance Code compliant unknown
Breakdown Voltage-Min 43.7 V 44.7 V
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/552C MIL-19500/500
Rep Pk Reverse Voltage-Max 40.3 V 40.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 49.4 V
Clamping Voltage-Max 64.8 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

Compare JANTX1N6475 with alternatives

Compare JANTXV1N5649A with alternatives