JANTXV1N5285
vs
CH1N5285
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Package Description |
O-LALF-W2
|
DIE-1
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.40
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| Dynamic Impedance-Min |
14000000 Ω
|
|
| JEDEC-95 Code |
DO-204AA
|
|
| JESD-30 Code |
O-LALF-W2
|
S-XUUC-N1
|
| JESD-609 Code |
e0
|
e3
|
| Limiting Voltage-Max |
1 V
|
1 V
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
1
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
SQUARE
|
| Package Style |
LONG FORM
|
UNCASED CHIP
|
| Power Dissipation-Max |
0.6 W
|
0.475 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Regulation Current-Nom (Ireg) |
0.27 mA
|
0.27 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
FIELD EFFECT
|
FIELD EFFECT
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN
|
| Terminal Form |
WIRE
|
NO LEAD
|
| Terminal Position |
AXIAL
|
UPPER
|
| Base Number Matches |
5
|
1
|
| Part Package Code |
|
DIE
|
| Pin Count |
|
1
|
| Knee Impedance-Max |
|
1950000 Ω
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare JANTXV1N5285 with alternatives
Compare CH1N5285 with alternatives