JANTXV1N5555 vs JANTX1N5555 feature comparison

JANTXV1N5555 Semicon Components Inc

Buy Now Datasheet

JANTX1N5555 Silicon Transistor Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC SILICON TRANSISTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min 33 V 33 V
Breakdown Voltage-Nom 33 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 47.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/434 MIL-19500/500
Rep Pk Reverse Voltage-Max 31 V 30.5 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 8
JEDEC-95 Code DO-13

Compare JANTXV1N5555 with alternatives

Compare JANTX1N5555 with alternatives