JANTXV1N5806 vs JANS1N5806 feature comparison

JANTXV1N5806 Microsemi Corporation

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JANS1N5806 Bkc Semiconductors Inc

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP BKC SEMICONDUCTORS INC
Package Description HERMETIC SEALED, GLASS, A PACKAGE-2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 2.5 A
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 150 V 150 V
Reverse Recovery Time-Max 0.025 µs 0.025 µs
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 2
Application ULTRA FAST RECOVERY POWER
Breakdown Voltage-Min 160 V
Non-rep Pk Forward Current-Max 35 A
Reverse Current-Max 1 µA

Compare JANTXV1N5806 with alternatives

Compare JANS1N5806 with alternatives