JANTXV1N6042A vs JANTX1N6042A feature comparison

JANTXV1N6042A Vishay Semiconductors

Buy Now Datasheet

JANTX1N6042A New England Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer GENERAL SEMICONDUCTOR INC NEW ENGLAND SEMICONDUCTOR
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature CAPACITANCE IS CAPTURED FROM THE GRAPH
Breakdown Voltage-Max 13.7 V 13.7 V
Breakdown Voltage-Min 12.4 V 12.4 V
Case Connection CATHODE
Clamping Voltage-Max 18.2 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 10000 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/507 MIL-19500/500
Rep Pk Reverse Voltage-Max 11 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 7
JEDEC-95 Code DO-13

Compare JANTXV1N6042A with alternatives