JANTXV1N6116A vs JAN1N6112A feature comparison

JANTXV1N6116A Bkc Semiconductors Inc

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JAN1N6112A Micross Components

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Rohs Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROSS COMPONENTS
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 24.3 V 17.1 V
Breakdown Voltage-Nom 27 V 18 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 39.2 V 25.1 V
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 2
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 20.6 V 13.7 V
Reverse Current-Max 1 µA 1 µA
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish Tin/Lead (Sn/Pb) TIN COPPER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 9
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Factory Lead Time 29 Weeks
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.5 W
Reference Standard MIL-19500/516

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