JANTXV1N6131 vs JAN1N6131A feature comparison

JANTXV1N6131 Microchip Technology Inc

Buy Now Datasheet

JAN1N6131A Semtech Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SEMTECH CORP
Reach Compliance Code compliant unknown
Breakdown Voltage-Min 99.275 V 104.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0 e2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 2
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1.5 W
Qualification Status Qualified Qualified
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD TIN COPPER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 2
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer SEMTECH
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 110 V
Clamping Voltage-Max 151.3 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 83.6 V
Reverse Current-Max 1 µA

Compare JANTXV1N6131 with alternatives

Compare JAN1N6131A with alternatives