JANTXV1N6133
vs
1N6133
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| Breakdown Voltage-Min |
117.325 V
|
117 V
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-XALF-W2
|
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
|
| Qualification Status |
Qualified
|
|
| Surface Mount |
NO
|
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
8
|
11
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Rep Pk Reverse Voltage-Max |
|
98.8 V
|
|
|
|
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