JANTXV1N6137A vs P4KE200C-G feature comparison

JANTXV1N6137A Microsemi Corporation

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P4KE200C-G Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 190 V 180 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Package Description O-PALF-W2
Breakdown Voltage-Max 220 V
JEDEC-95 Code DO-41
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 162 V

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