JANTXV1N6159A vs JAN1N6159A feature comparison

JANTXV1N6159A Semtech Corporation

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JAN1N6159A Microchip Technology Inc

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Part Life Cycle Code Transferred Active
Ihs Manufacturer SEMTECH CORP MICROCHIP TECHNOLOGY INC
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 48.5 V 48.5 V
Breakdown Voltage-Nom 51 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 70.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Qualified Qualified
Reference Standard MIL-19500/516 MIL-19500
Rep Pk Reverse Voltage-Max 38.8 V 38.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 6
Rohs Code No
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare JANTXV1N6159A with alternatives

Compare JAN1N6159A with alternatives