JANTXV1N6170A vs 1N6170A feature comparison

JANTXV1N6170A Microchip Technology Inc

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1N6170A New Jersey Semiconductor Products Inc

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Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 142.5 V 142.5 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 114 V 114 V
Surface Mount NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 6 11

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