JANTXV1N6173A vs JANTXV1N6070A feature comparison

JANTXV1N6173A Microchip Technology Inc

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JANTXV1N6070A Semicon Components Inc

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SEMICON COMPONENTS INC
Reach Compliance Code compliant unknown
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 190 V 181 V
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500/507
Rep Pk Reverse Voltage-Max 152 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 200 V
Clamping Voltage-Max 278 V
Reverse Current-Max 5 µA

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Compare JANTXV1N6070A with alternatives