JANTXV1N6464US
vs
1N6464USE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
BKC SEMICONDUCTORS INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
METALLURGICALLY BODED
|
|
| Breakdown Voltage-Min |
16.4 V
|
|
| Case Connection |
ISOLATED
|
|
| Clamping Voltage-Max |
26.5 V
|
26.5 V
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-MELF-R2
|
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500/551
|
|
| Rep Pk Reverse Voltage-Max |
15 V
|
15 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
PURE MATTE TIN
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Base Number Matches |
6
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
16.4 V
|
|
|
|
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