JANTXV1N6476US
vs
1N6476US
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Package Description |
GLASS PACKAGE-2
|
HERMETICALLY SEALED, GLASS, D-5C, MELF-2
|
| Reach Compliance Code |
compliant
|
unknown
|
| Breakdown Voltage-Min |
54 V
|
54 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LELF-R2
|
R-LELF-R2
|
| JESD-609 Code |
e0
|
e0
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
3 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/552C
|
|
| Rep Pk Reverse Voltage-Max |
51.6 V
|
51.6 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
5
|
5
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
MELF
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
54 V
|
| Clamping Voltage-Max |
|
78.5 V
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare JANTXV1N6476US with alternatives
Compare 1N6476US with alternatives