JANTXV2N5660
vs
BDT61
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SILICON TRANSISTOR CORP
|
POWER INNOVATIONS LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
2 A
|
4 A
|
| Collector-Emitter Voltage-Max |
200 V
|
60 V
|
| Configuration |
SINGLE
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
40
|
750
|
| JEDEC-95 Code |
TO-213
|
TO-220AB
|
| JESD-30 Code |
O-MBFM-P2
|
R-PSFM-T3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
200 °C
|
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
PIN/PEG
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
20 MHz
|
|
| Base Number Matches |
8
|
7
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| Transistor Application |
|
SWITCHING
|
|
|
|
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