JANTXV2N5660 vs JAN2N5660 feature comparison

JANTXV2N5660 Silicon Transistor Corporation

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JAN2N5660 Defense Logistics Agency

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Rohs Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer SILICON TRANSISTOR CORP DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 2 A 2 A
Collector-Emitter Voltage-Max 200 V 200 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JEDEC-95 Code TO-213 TO-66
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified Qualified
Reference Standard MIL MIL-19500/454E
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 20 MHz
Base Number Matches 8 8

Compare JANTXV2N5660 with alternatives

Compare JAN2N5660 with alternatives