K3N6U1000F-GC120 vs AM29F032B150SC feature comparison

K3N6U1000F-GC120 Samsung Semiconductor

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AM29F032B150SC AMD

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ADVANCED MICRO DEVICES INC
Part Package Code SOIC SOIC
Package Description SOP, SOP,
Pin Count 44 44
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8542.32.00.71
Access Time-Max 120 ns 150 ns
Alternate Memory Width 8
JESD-30 Code R-PDSO-G44 R-PDSO-G44
Length 28.5 mm
Memory Density 33554432 bit 33554432 bit
Memory IC Type MASK ROM FLASH
Memory Width 16 8
Number of Functions 1 1
Number of Terminals 44 44
Number of Words 2097152 words 4194304 words
Number of Words Code 2000000 4000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 2MX16 4MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code SOP SOP
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 225
Qualification Status Not Qualified Not Qualified
Seated Height-Max 3.1 mm
Supply Current-Max 0.04 mA
Supply Voltage-Max (Vsup) 3.3 V 5.5 V
Supply Voltage-Min (Vsup) 2.7 V 4.5 V
Supply Voltage-Nom (Vsup) 3 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 12.6 mm
Base Number Matches 1 3
Programming Voltage 5 V

Compare K3N6U1000F-GC120 with alternatives

Compare AM29F032B150SC with alternatives