K4B2G1646Q-BCK0
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
|
| Part Package Code |
BGA
|
|
| Package Description |
HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
|
|
| Pin Count |
96
|
|
| Reach Compliance Code |
compliant
|
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| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.36
|
|
| Access Mode |
MULTI BANK PAGE BURST
|
|
| Access Time-Max |
0.225 ns
|
|
| Additional Feature |
AUTO/SELF REFRESH
|
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| Clock Frequency-Max (fCLK) |
800 MHz
|
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| I/O Type |
COMMON
|
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| Interleaved Burst Length |
8
|
|
| JESD-30 Code |
R-PBGA-B96
|
|
| Length |
13.3 mm
|
|
| Memory Density |
2147483648 bit
|
|
| Memory IC Type |
DDR3 DRAM
|
|
| Memory Width |
16
|
|
| Number of Functions |
1
|
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| Number of Ports |
1
|
|
| Number of Terminals |
96
|
|
| Number of Words |
134217728 words
|
|
| Number of Words Code |
128000000
|
|
| Operating Mode |
SYNCHRONOUS
|
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| Operating Temperature-Max |
85 °C
|
|
| Operating Temperature-Min |
|
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| Organization |
128MX16
|
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Code |
TFBGA
|
|
| Package Equivalence Code |
BGA96,9X16,32
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
|
| Refresh Cycles |
8192
|
|
| Seated Height-Max |
1.2 mm
|
|
| Self Refresh |
YES
|
|
| Sequential Burst Length |
8
|
|
| Standby Current-Max |
0.011 A
|
|
| Supply Current-Max |
0.219 mA
|
|
| Supply Voltage-Max (Vsup) |
1.575 V
|
|
| Supply Voltage-Min (Vsup) |
1.425 V
|
|
| Supply Voltage-Nom (Vsup) |
1.5 V
|
|
| Surface Mount |
YES
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
OTHER
|
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| Terminal Form |
BALL
|
|
| Terminal Pitch |
0.8 mm
|
|
| Terminal Position |
BOTTOM
|
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| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
7.5 mm
|
|
| Base Number Matches |
4
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