K6F1016S4M-TB120
vs
HY62QF8100CSLF-I-70
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SK HYNIX INC
|
| Part Package Code |
TSOP2
|
BGA
|
| Package Description |
TSOP2,
|
TFBGA,
|
| Pin Count |
44
|
48
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
120 ns
|
70 ns
|
| JESD-30 Code |
R-PDSO-G44
|
R-PBGA-B48
|
| Length |
18.41 mm
|
6.3 mm
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
16
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
44
|
48
|
| Number of Words |
65536 words
|
131072 words
|
| Number of Words Code |
64000
|
128000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
64KX16
|
128KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP2
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.1 mm
|
| Supply Voltage-Max (Vsup) |
3.3 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Form |
GULL WING
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.75 mm
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Width |
10.16 mm
|
6.2 mm
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e1
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare K6F1016S4M-TB120 with alternatives
Compare HY62QF8100CSLF-I-70 with alternatives