KBP06M
vs
3N257
feature comparison
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
JINAN JINGHENG ELECTRONICS CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
600 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
|
| Forward Voltage-Max (VF) |
1.1 V
|
|
| Non-rep Pk Forward Current-Max |
60 A
|
|
| Number of Elements |
4
|
|
| Number of Phases |
1
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
2 A
|
|
| Rep Pk Reverse Voltage-Max |
600 V
|
|
| Base Number Matches |
12
|
14
|
| ECCN Code |
|
EAR99
|
|
|
|