KBU6M
vs
GBU6M/1-E3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| JESD-30 Code |
R-XSFM-T4
|
|
| Non-rep Pk Forward Current-Max |
250 A
|
175 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
|
| Number of Terminals |
4
|
|
| Output Current-Max |
6 A
|
6 A
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
34
|
2
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
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