KBU801GT0 vs GBU8005 feature comparison

KBU801GT0 Taiwan Semiconductor

Buy Now Datasheet

GBU8005 Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 50 V 50 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSFM-W4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 2 1

Compare KBU801GT0 with alternatives

Compare GBU8005 with alternatives