KBU8A vs GBU8B feature comparison

KBU8A GeneSic Semiconductor Inc

Buy Now Datasheet

GBU8B LRC Leshan Radio Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GENESIC SEMICONDUCTOR INC LESHAN RADIO CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 50 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSFM-W4
Non-rep Pk Forward Current-Max 300 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 6 A 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 50 V 100 V
Surface Mount NO NO
Terminal Form WIRE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 32
Base Number Matches 31 33
Case Connection ISOLATED
JESD-609 Code e3
Terminal Finish Tin (Sn)

Compare GBU8B with alternatives